Checkforupdates. Layer Hall effect (LHE), initially discovered in the magnetic topological insulator MnBi2Te4 film, expands the Hall effect family and opens a promising avenue for layertronics ...
Quantum Anomalous Hall Effect. In classical physics, the Hall effect (HE), discovered in 1879 by Edwin H. Hall, is defined as the generation of a transverse electrical field (potential difference) across the width of a conductor, when an external magnetic field is applied perpendicular to the direction of electric current passing through …
4 · AMA Style Chang Y, Zhang Z, Deng L, Wu Y, Zhang X. Ferrovalley and Quantum Anomalous Hall Effect in Janus TiTeCl Monolayer.
The anomalous Hall conductivity as a function of energy for (c) in-plane triangular AFM structure of Mn 3 Sn and d canted non-coplanar structure for Mn 2.5 Fe 0.5 Sn systems. Fermi level is taken ...
The quantum Hall (QH) effect, quantized Hall resistance combined with zero longitudinal resistance, is the characteristic experimental fingerprint of Chern insulators—topologically …
The Progress and Potential Applications of Quantum Anomalous Hall Effect. Published under licence by IOP Publishing Ltd Journal of Physics: Conference Series, Volume 2386, The International Conference on Computing Innovation and Applied Physics (CONF-CIAP 2022), 20 August 2022, Online Citation Yuanyang Deng 2022 J. Phys.: …
The anomalous Hall effect and spin–orbit torque of TbCo-based multilayer films have been methodically studied in recent years. Many properties of the films can be obtained by the anomalous Hall resistance loops of the samples. We report on the effects of a structure composed of two heavy metals as the buffer layers on the anomalous Hall …
This effect is called the quantum anomalous Hall (QAH) effect. QAH insulators, i.e. magnetic insulators exhibiting QAH effect (C = 0), as important members in the family of quantum Hall systems ...
Anomalous Hall (AH) effect, which exists in ferromagnetic metals 1, 2, means that the electric Hall conductance remains to be finite even at zero external magnetic field. Furthermore, if the ...
Abstract. A quantum anomalous Hall system possesses chiral edge states around its boundary, giving rise to quantized Hall conductance even in the absence of external magnetic field. Quantum spin Hall effect is a spin version of quantum Hall effect. A quantum spin Hall system possesses a pair of helical edge states, in which an electric …
The anomalous Hall effect (AHE) occurs in solids with broken time-reversal symmetry, typically in a ferromagnetic phase, as a consequence of spin-orbit coupling. Experimental and theoretical studies of the AHE are reviewed, focusing on recent developments that have provided a more complete framework for understanding this …
Abstract. We find theoretically a new quantum state of matter-the valley-polarized quantum anomalous Hall state in silicene. In the presence of Rashba spin-orbit coupling and an exchange field ...
Possible application for data storage The study of the research group at the University of Augsburg systematically investigated and analyzed the anomalous Hall effect at low temperatures ...
Quantum anomalous Hall effect has been observed in magnetically doped topological insulators. However, full quantization, up until now, is limited …
Quantum anomalous Hall effect—the appearance of quantized Hall conductance at zero magnetic field—has been observed in thin films of the topological insulator Bi 2 Se 3 doped with magnetic atoms. The doping, …
Recently, quantum anomalous Hall (QAH)-mediated non-reciprocal transport has been observed in magnetic TIs 38,39. The non-trivial band and ferromagnetism lead to a chiral edge state and then give ...
The QAH effect can also be realized in various other real materials, such as 2D organic topological insulators, heavy atomic layers on magnetic insulators, GdO/EuO quantum wells, (111) bilayers of LaCoO 3, and so on. Two QAH-based novel topological states, VP-QAH state and QSQAH state, were also discussed in this work.
Quantum Anomalous Hall Effect. September 2022. DOI: 10.1007/978-3-031-17523-7_12. In book: Dialogues Between Physics and Mathematics (pp.285-289) Authors: Qikun Xue. To read the full-text of this ...
The quantum Hall effect is usually observed when a two-dimensional electron gas is subjected to an external magnetic field, so that their quantum states form Landau levels. In this work we predict that a new phenomenon, the quantum anomalous Hall effect, can be realized in Hg 1 − y Mn y Te quantum wells, without an external …
The quantum anomalous Hall (QAH) effect has been experimentally observed in magnetically-doped topological insulators. However, the QAH effect is only seen at extremely low temperatures due to the ...
The quantum anomalous Hall (QAH) effect 1,2,3, a zero magnetic field manifestation of the integer quantum Hall effect, originates from the exchange interaction between electron spin and magnetism ...
Quantum anomalous Hall effect from inverted charge transfer gap. A general mechanism is presented by which topological physics arises in strongly correlated systems without flat bands. Starting from a charge transfer insulator, topology emerges when the charge transfer energy between the cation and anion is reduced to invert the lower …
The quantum anomalous Hall effect (QAHE) has attracted significant attention as it provides intriguing platforms for exploring prominent physical phenomena and applications of low-dissipation devices. Here, we put forward that, unlike previously reported QAH insulators emerging with either out-of-plane or in-plane magnetizations, robust …
Abstract. Despite its long history, the anomalous Hall continues to attract attention due to its complex origins, its connection to topology, and its use as a probe of magnetic order. In this work ...
In addition, spin–orbit coupling (SOC) triggers a topologically nontrivial band gap of 301 meV with a nonzero Chern number (|C| = 2), giving rise to a robust quantum anomalous Hall (QAH) state. The 2D crystal also exhibits high carrier mobilites of 0.452 × 10 3 and 0.201 × 10 3 cm 2 V −1 s −1 for the electrons and holes, respectively.
The quantum anomalous Hall effect (QAHE) is one of the hallmark phenomena associated with topological properties of the electronic band structure. When an electric current flows in a ferromagnetic topological insulator, the Hall resistance orthogonal to both current and magnetization is quantized to the von Klitzing constant (h/e^2), where h ...
which is later known as the "anomalous Hall effect" [4] (Fig. 1(b)). The physical origin of anomalous Hall effect has been studied extensively in the past 50 years [5]. Although the gen-eral mechanism is complicated with multiple contributions, the key ingredients
Quantum anomalous Hall (QAH) insulators are an ideal platform for developing topological electronic devices, but their low observation temperature limits the applications. In this study, based on first-principles calculations, monolayer Ti 2 Sb 2 KRb and Ti 2 Bi 2 NaK are demonstrated to be QAH insulators with topological gaps 43 and …
Tailoring the quantum anomalous la yer Hall effect in multiferroic bilayers through sliding ... and storage 12–14. Consequently, the precise control of Berr y cur vature becomes imperative for achie ving tunable Hall effects. In some layered materials, electr ons ...
The Hall effect enables scientists to directly measure carrier densities in semiconductors. The quantum version of the effect was dis- covered in 1980 in semiconductor quantum …
The quantum anomalous Hall (QAH) effect—a macroscopic manifestation of chiral band topology at zero magnetic field—has been experimentally realized only by the magnetic doping of topological ...
The quantum anomalous Hall effect (QAHE) hosts the dissipationless chiral edge states associated with the nonzero Chern number, providing potentially significant applications …
The quantum Hall effect discovered in two-dimensional electronic systems under a strong magnetic field provided new insights into condensed matter physics, especially the topological aspect of electronic states. The quantum anomalous Hall effect is a special kind of the quantum Hall effect that occurs without a magnetic field.
If time- reversal symmetry is broken by introducing magnetism into the system, a bandgap can also open up in the surface state — this leads to the emergence of the quantum …
QAHE in topological materials: key to low-energy electronics Topological insulators, recognized by the Nobel Prize in Physics in 2016, are based on a quantum effect known as the quantum anomalous ...
A new device has been fabricated that can demonstrate the quantum anomalous Hall effect, in which tiny, discrete voltage steps are generated by an external magnetic field. This work may enable ...
The quantum anomalous Hall (QAH) effect have been experimentally observed in magnetically-doped topological insulators. However, the QAH effect only at extremely low temperatures due to the weak magnetic coupling, small band gap and low carrier mobility. Here, based on first-principles density functional theory, we predict that …
Abstract. The anomalous valley Hall effect (AVHE) can be used to explore and utilize valley degrees of freedom in materials, which has potential applications in fields such as information storage ...
The quantum anomalous Hall effect (QAHE) has attracted significant attention as it provides intriguing platforms for exploring prominent physical phenomena …
Over the past 40 years, the quantum Hall effect (QHE) has inspired new theories and led to experimental discoveries in a range of fields going beyond solid-state electronics to photonics and ...
Quantum anomalous Hall effect (QAHE) represents a quantized version of the classical anomalous Hall effect. In the latter case the magnetization takes over the role of magnetic field and induces nonzero off-diagonal elements in the conductivity matrix. In magnetic topological insulators with the band inversion the QAHE can be reached due to …
Experimental results showing the quantum anomalous Hall effect: the different curves represent the field dependence of the Hall resistance measured at varied gate voltages. Within a certain range of gate voltages, the zero magnetic field anomalous Hall resistance reaches the quantized value h/e 2 .